An experimental study on substrate coupling in bipolar/BiCMOS technologies

作     者：Pfost, M Brenner, P Huttner, T Romanyuk, A 

作者机构：Infineon Technol AG D-81541 Munich Germany Univ Basel Inst Phys CH-4056 Basel Switzerland 

出 版 物：《IEEE JOURNAL OF SOLID-STATE CIRCUITS》 

年 卷 期：2004年第39卷第10期

页      面：1755-1763页

核心收录：

学科分类：0808[工学-电气工程] 08[工学] 

主　　题：BiCMOS technology optimization crosstalk reduction shielding substrate coupling substrate crosstalk 

摘      要：The parasitic influence of the substrate can lead to a significant performance degradation of advanced high-speed and RF circuits. Hence, a careful circuit layout is necessary, and shielding measures such as guard rings must usually be applied. However, this might not be sufficient for high-performance circuits. Moreover, such measures often lead to an increased chip size. Therefore, not only the layout but also the technology itself should be optimized to suppress substrate coupling as much as possible. In this work, different technology-related options such as high-resistivity and SOI substrates, transistor isolation techniques, and shielding methods are investigated. Their influence on substrate coupling is determined up to 50 GHz by measurements of special test structures. The observed behavior is thoroughly explained so that guidelines for technology development and circuit design can be derived. This paper focuses primarily on RF and high-speed lCs fabricated in advanced bipolar or BiCMOS technologies using p(-) substrates, although the results apply also to (RF-)CMOS circuits with such substrate materials.