Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

作     者：俞波 王源 贾嵩 张钢刚 

作者机构：Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University 

出 版 物：《Journal of Semiconductors》 (半导体学报（英文版）)

年 卷 期：2009年第30卷第7期

页      面：83-85页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

主　　题：mixed-voltage I/O buffer multi-power domain thin-oxide CMOS 

摘      要：This paper presents a novel mixed-voltage I/O buffer without an extra dual-oxide CMOS *** mixed-voltage I/O buffer with a simplified circuit scheme can overcome the problems of leakage current and gateoxide reliability that the conventional CMOS I/O buffer *** design is realized in a 0.13-μm CMOS process and the simulation results show a good performance increased by ～34% with respect to the product of power consumption and speed.