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作者机构:Department of ChemistryUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA Department of Materials Science and EngineeringUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA Department of Electrical and Computer EngineeringUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA Department of Mechanical Science and EngineeringUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA Frederick-Seitz Materials Research LaboratoryUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA Beckman Institute for Advanced Science and TechnologyUniversity of Illinois at Urbana-ChampaignUrbanaIllinois 61801USA
出 版 物:《Nano Research》 (纳米研究(英文版))
年 卷 期:2008年第1卷第4期
页 面:259-272页
核心收录:
学科分类:08[工学] 0805[工学-材料科学与工程(可授工学、理学学位)] 080502[工学-材料学]
基 金:This work was supported by DARPA-funded AFRL-managed Macroelectronics Program Contract FA8650-04-C-7101 the National Science Foundation(NSF)through grant NIRT-0403489 the U.S.Department of Energy through grant DE-FG02-07ER46471 the Frederick Seitz Materials Research Lab and the Center for Microanalysis of Materials in University of Illinois which is funded by U.S.Department of Energy through grant DE-FG02-07ER46453 and DE-FG02-07ER46471 the Center for Nanoscale Chemical Electrical Mechanical Manufacturing Systems in University of Illinois which is funded by the NSF through grant DMI-0328162,Motorola Inc.,Intel Corp.,DuPont Corp.,and Northrop Grumman
主 题:Carbon nanotubes electronic devices thin-film transistors
摘 要:Singled-walled carbon nanotubes(SWNTs),in the form of ultrathin fi lms of random networks,aligned arrays,or anything in between,provide an unusual type of electronic material that can be integrated into circuits in a conventional,scalable *** electrical,mechanical,and optical properties of such fi lms can,in certain cases,approach the remarkable characteristics of the individual SWNTs,thereby making them attractive for applications in electronics,sensors,and other *** review discusses the synthesis and assembly of SWNTs into thin film architectures of various types and provides examples of their use in digital electronic circuits with levels of integration approaching 100 transistors and in analog radio frequency(RF)systems with operating frequencies up to several gigahertz,including transistor radios in which SWNT transistors provide all of the active *** results represent important steps in the development of an SWNT-based electronics technology that could fi nd utility in areas such as fl exible electronics,RF analog devices and others that might complement the capabilities of established systems.