Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

作     者：马晓华 吕敏 庞磊 姜元祺 杨靖治 陈伟伟 刘新宇 

作者机构：School of Advanced Materials and NanotechnologyXidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and DevicesSchool of MicroelectronicsXidian University Key Laboratory of Microelectronics Device & Integrated TechnologyInstitute of MicroelectronicsChinese Academy of Sciences 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2014年第23卷第2期

页      面：452-456页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the Program for New Century Excellent Talents in University China (Grant No.NCET-12-0915) 

主　　题：kink effect deep levels hot electrons GaN-based HEMT 

摘      要：The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.