Hole transporting material 5,10,15-tribenzyl-5Hdiindolo[3,2-a:3',2'-c]-carbazole for efficient optoelectronic applications as an active layer

作     者：郑燕琼 William J.Potscavage Jr 张建华 魏斌 黄荣娟 Zheng Yan-Qiong;William J. Potscavage Jr;Zhang Jian-Hua;Wei Bin;Huang Rong-Juan

作者机构：Key Laboratory of Advanced Display and System ApplicationsMinistry of EducationShanghai University Center for Organic Photonics and Electronics Research(OPERA) and International Institute for Carbon Neutral Energy Research(WPI-I2CNER)Kyushu University 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2015年第24卷第2期

页      面：428-431页

核心收录：

学科分类：08[工学] 0803[工学-光学工程] 

基　　金：supported by the Funding Program for World-Leading Innovative R&D on Science and Technology(FIRST)from JSPS the Fund from the Science and Technology Commission of Shanghai Municipality,China(Grant Nos.14DZ2280900 and 14XD1401800) the Natural Science Foundation of Shanghai(Grant No.15ZR1416600) 

主　　题：5 10 15-tribenzyl-5H-diindolo[3 2-a：3＇ 2＇-c]-carbazole photodetector organic light-emitting diode Schottky junction 

摘      要：In order to explore the novel application of the transparent hole-transporting material 5,10,15-tribenzyl-5Hdiindolo[3,2-a：3＇,2＇-c]-carbazole（TBDI）,in this article TBDI is used as an active layer but not a buffer layer in a photodetector（PD）,organic light-emitting diode（OLED）,and organic photovoltaic cell（OPV） for the first ***,the absorption and emission spectra of a blend layer comprised of TBDI and electron-transporting material bis-（2-methyl-8-quinolinate） 4-phenylphenolate（BAlq） are *** on the absorption properties,an organic PD with a peak absorption at 320 nm is fabricated,and a relatively-high detectivity of 2.44×10^（11） cm· Hz^（1/2）/W under 320-nm illumination is *** TBDI/tris（8-hydroxyquinoline） aluminum（Alq_3） OLED device exhibits a comparable external quantum efficiency and current efficiency to a traditional 4,4-bis[N-（l-naphthyl）-N-phenyl-amino]biphenyl（α-NPD）/Alq_3 OLED.A C_（70）-based Schottky junction with 5 wt%-TBDI yields a power conversion efficiency of 5.0%,which is much higher than 1.7%for an α-NPD-based junction in the same *** results suggest that TBDI has some promising properties which are in favor of the hole-transporting in Schottky junctions with a low-concentration donor.