Effect of Oxygen Partial Pressure on Epitaxial Growth and Properties of Laser-Ablated AZO Thin Films

作     者：王传彬 LUO Sijun SHEN Qiang 张联盟 

作者机构：State Key Lab of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology Wuhan 430070 China Department of Chemical Engineering and Materials Science University of California Davis CA 95616 USA 

出 版 物：《Journal of Wuhan University of Technology(Materials Science)》 (武汉理工大学学报（材料科学英文版）)

年 卷 期：2016年第31卷第1期

页      面：27-30页

核心收录：

学科分类：07[理学] 070205[理学-凝聚态物理] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Funded by National Natural Science Foundation of China(Nos.51272195,51521001) 111 project(No.B13035) Hubei Provincial National Natural Science Foundation(No.2015CFB724) Fundamental Research Funds for the Central Universities(Nos.2013-ZD-4,2014-KF-3) 

主　　题：AZO thin films epitaxial growth laser ablation oxygen partial pressure electrical and optical properties 

摘      要：Al-doped ZnO（AZO） thin films were grown on c-sapphire substrates by laser ablation under different oxygen partial pressures（P_（O2））.The effect of P_（O2） on the crystal structure,preferred orientation as well as the electrical and optical properties of the films was *** structure characterizations indicated that the as-grown films were single-phased with a wurtzite ZnO structure,showing a significant c-axis *** films were well crystallized and exhibited better crystallinity and denser texture when deposited at higher P_（O2）.At the optimum oxygen partial pressures of 10- 15 Pa,the AZO thin films were epitaxially grown on c-sapphire substrates with the（0001） plane parallel to the substrate surface,i e,the epitaxial relationship was AZO（000 1） // A1_2O_3（000 1）.With increasing P_（O2）,the value of Hall carrier mobility was increased remarkably while that of carrier concentration was decreased slightly,which led to an enhancement in electrical conductivity of the AZO thin *** the films were highly transparent with an optical transmittance higher than 85%.