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作者机构:Colorado Sch Mines Div Engn Golden CO 80401 USA Univ Calif Santa Barbara Dept Mech & Environm Engn Computat Sci & Engn Program Santa Barbara CA 93106 USA
出 版 物:《JOURNAL OF THE ELECTROCHEMICAL SOCIETY》 (电化学学会杂志)
年 卷 期:2000年第147卷第7期
页 面:2718-2726页
核心收录:
学科分类:081704[工学-应用化学] 07[理学] 070304[理学-物理化学(含∶化学物理)] 08[工学] 0817[工学-化学工程与技术] 0805[工学-材料科学与工程(可授工学、理学学位)] 0703[理学-化学]
主 题:stagnation flow Current velocity Optimization algorithms trajectory Flow rates materials handling Manufacturing costs Vapor deposition process Chemical vapor deposition deposition
摘 要:There are potentially great benefits to developing materials processes that deliberately vary process conditions such as temperature, or flow rates, during the course of the process. Transient processing holds the promise of reducing manufacturing cost and the possibility of producing material systems that would be infeasible to manufacture with steady processes. Once the notion of transient processing is embraced, there is a need and opportunity to develop optimal trajectories through which the process will proceed. In this paper, a stagnation flow dynamic optimization algorithm for two chemical vapor deposition processes is demonstrated. The first example seeks to control film composition during the deposition of yttrium-barium-copper oxide films, in which a wafer temperature transient is imposed. Transient trajectories of precursor flow rates are determined by optimization, so that the correct flux ratios of yttrium, barium, and copper atoms to the surface are maintained. The second example determines trajectories that minimize the cost associated with multiple competing objectives during the deposition of a copper film. Time varying trajectories of copper precursor concentration and the inlet flow velocity are computed so as to minimize a composite cost function that considers precursor utilization and process throughput. (C) 2000 The Electrochemical Society. S0013-4651(99)10-034-X. All rights reserved.