INTEGRATION OF WET-CHEMICAL PROCESSING WITH LOW-TEMPERATURE PLASMA-ASSISTED PROCESSES FOR THE FORMATION OF DEVICE-QUALITY SI/SIO2 INTERFACES ON SI(111) SURFACES

作     者：YASUDA, T BJORKMAN, CH MA, Y LU, Z LUCOVSKY, G EMMERICHS, U MEYER, C LEO, K KURZ, H 

作者机构：Departments of Physics Materials Science and Engineering and Electrical and Computer Engineering North Carolina State University Raleigh NC 27695 USA Institute of Semiconductor Electronics II Rheinische-Westfälische Technische Hochschule 5100 Aachen Germany 

出 版 物：《MICROELECTRONIC ENGINEERING》 (Microelectron Eng)

年 卷 期：1994年第25卷第2-4期

页      面：217-222页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：Microelectronic processing 

摘      要：An integrated sequence of ex-situ wet-chemistry, and on-line low-temperature remote plasma-assisted techniques, for fabricating device-quality Si/SiO2 interfaces on Si(111) wafers is reported. Three factors contribute to the device quality interfaces i) the orientation of the Si surface relative to a perfect (111) alignment, ii) the pH of the final HF/NH4F rinse used in the pre-deposition wet-chemistry processing, and iii) the specific plasma-assisted oxidation and deposition processes used to form the SiO2/Si heterostructure.