The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

作     者：Sihua Zhong Bangwu Liu Yang Xia Jinhu Liu Jie Liu Zenan Shen Zheng Xu Chaobo Li 

作者机构：Institute of Solar Energy in School of Science Beijing Jiaotong University Beijing China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China 

出 版 物：《Energy Procedia》 

年 卷 期：2012年第14卷

页      面：505-511页

主　　题：black silicon diffusion temperature multicrystalline silicon solar cell 

摘      要：The black multi-crystalline silicon (mc-Si) has been successfully produced by plasma immersion ion implantation. The microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer, respectively. Results show that the black mc-Si exhibits a hillock structure with a low reflectance. Besides, with decreasing the diffusion temperature, the external quantum efficiency of the black mc-Si solar cell increases below ∼550 nm wavelength due to reduced surface recombination. The optimal conversion effieciency of the black mc-Si solar cell is 15.50% at the diffusion temperature of 825 °C. Furthermore, it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.