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作者机构:Inha Univ Dept Elect Engn Incheon 22212 South Korea Korea Inst Sci & Technol Ctr Optoelect Mat & Devices Postsilicon Semicond Inst KIST Sch Seoul 02792 South Korea Korea Inst Sci & Technol KIST Sch Div Nano & Informat Technol Seoul 02792 South Korea Korea Univ Coll Engn Display & Nanosyst Lab Seoul 02841 South Korea Yonsei Univ Inst Phys & Appl Phys Seoul 03722 South Korea
出 版 物:《ACS PHOTONICS》 (ACS Photonics)
年 卷 期:2018年第5卷第12期
页 面:4745-4750页
核心收录:
基 金:Korea Institute of Science and Technology (KIST) Institution Program [2E28180, 2E28200] National Research Foundation of Korea (NRF) [2017R1A2B2005640] NRF (SRC program) [2017R1A5A1014862] Basic Science Research Program through the NRF - Ministry of Education [2010-0020163] Ministry of Culture, Sports and Tourism (MCST) Korea Creative Content Agency (KOCCA) in the Culture Technology (CT) Research & Development Program 2018 [R2017060005]
主 题:two-dimensional van der Waals materials MoS2 graphene contact phototransistor photoinverter image sensor
摘 要:Two-dimensional (2D) MoS2 is a representative n-type transition-metal dichalcogenide (TMD) semiconductor that has great potential for future nanoscale electronic and optoelectronic applications. Here, we report a high-performance MoS2 phototransistor that exhibits a photoresponse in the 400-700 nm range with the maximum responsivity of over 1 X 10(4) A/W. As a more sophisticated optoelectronic application than a simple unit device, it is implemented in a photoinverter (NOT logic gate) connected to an external resistor, which clearly shows photoinduced static and dynamic characteristics. Furthermore, we demonstrate a prototype visible imager using the MoS2 photoinverter as imaging pixels as an excellent example of advanced developments in an optoelectronic system based on the 2D semiconductors.