Termination layer dependence of Schottky barrier height for La0.6Sr0.4MnO3/Nb:SrTiO3 heterojunctions

作     者：M. Minohara R. Yasuhara H. Kumigashira M. Oshima 

作者机构：Department of Applied Chemistry The University of Tokyo 7-3-1 Hongo Bunkyo-ku Tokyo 113-8656 Japan Precursory Research for Embryonic Science and Technology (PRESTO) Japan Science and Technology Agency Kawaguchi Saitama 332-0012 Japan Synchrotron Radiation Research Organization The University of Tokyo Bunkyo-ku Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology (CREST) Japan Science and Technology Agency Chiyoda-ku Tokyo 102-0075 Japan 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2010年第81卷第23期

页      面：235322-235322页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

基　　金：Japan Society for the Promotion of Science (JSPS) [A19684010, A19204037] JST PRESTO 

摘      要：We have investigated the interfacial termination layer dependence of the Schottky barrier height (SBH) for heterojunctions between polar La0.6Sr0.4MnO3 (LSMO) and nonpolar Nb-doped SrTiO3 (Nb:STO). The SBH for LSMO/TiO2-Nb:STO is higher than the SBH predicted from the Schottky-Mott rule by 0.5 eV, indicating the formation of an interface dipole. In contrast, for LSMO/SrO-Nb:STO, the SBH is lower than that predicted from the Schottky-Mott rule by 0.4 eV. These results indicate that a change in the polarity of the polar LSMO overlayers results in inversion of the direction of the interface dipole. The modulation of SBH depending on the interfacial termination layer is reasonably explained by interfacial electronic reconstruction to prevent polar divergence.