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作者机构:Department of Physics Queens College of the City University of New York Flushing New York 11367 USA
出 版 物:《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)
年 卷 期:2005年第72卷第11期
页 面:115304-115304页
核心收录:
学科分类:0808[工学-电气工程] 0809[工学-电子科学与技术(可授工学、理学学位)] 07[理学] 0805[工学-材料科学与工程(可授工学、理学学位)] 0702[理学-物理学]
摘 要:Considering the effects of the electric field on the low temperature absorption line of quantum well excitons, we show that, for moderate strength of the electric field, the main contribution to the field dependence of the linewidth results from the field induced modifications of the inhomogeneous broadening of excitons. We find that the strength of the random potential acting on the quantum well excitons due to alloy disorder and interface roughness can either decrease or increase with the field depending upon the thickness of the well. This means that under certain conditions one can observe counterintuitive narrowing of the exciton spectral lines in an electric field.