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作者机构:Bell Laboratories Lucent Technologies Murray Hill New Jersey 07974 Department of Applied Physics & Applied Math Columbia University New York City New York 10027 Los Alamos National Laboratory Los Alamos New Mexico 87545
出 版 物:《Physical Review Letters》 (Phys Rev Lett)
年 卷 期:2002年第88卷第16期
页 面:166803-166803页
核心收录:
摘 要:We have investigated the effect of an in-plane parallel magnetic field (B‖) on two high mobility metalliclike dilute two-dimensional hole gas systems in GaAs quantum wells. The experiments reveal that, while suppressing the magnitude of the low temperature resistance drop, B‖ does not affect Ea, the characteristic energy scale of the metallic resistance drop. The field Bc at which the metalliclike resistance drop vanishes is dependent on both the width of the quantum well and the orientation of B‖. It is unexpected that Ea is unaffected by B‖ up to Bc despite the fact that the Zeeman energy at Bc is roughly equal to Ea.