Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films

作     者：R. De Bastiani E. Carria S. Gibilisco M. G. Grimaldi A. R. Pennisi A. Gotti A. Pirovano R. Bez E. Rimini 

作者机构：Dipartimento di Fisica ed Astronomia Università di Catania and MATIS CNR-INFM 64 via S. Sofia I-95123 Catania Italy Numonyx R&D Technology Development Via Olivetti 2 Agrate Brianza 20041 Milan Italy Dipartimento di Fisica ed Astronomia Università di Catania and CNR-IMM 64 via S. Sofia I-95123 Catania Italy 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2009年第80卷第24期

页      面：245205-245205页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：FIRB [BIP06Y5JJ] 

主　　题：amorphous semiconductors bonds (chemical) crystallisation germanium compounds ion beam effects IV-VI semiconductors Raman spectra reflectivity semiconductor thin films sputter deposition time resolved spectra 

摘      要：The change in the local order of amorphous sputter deposited GeTe thin films irradiated with Ge+ ion and its influence on the subsequent thermal induced crystallization has been investigated by means of micro-Raman spectroscopy and in situ time-resolved reflectivity. A reduction in the Ge-rich tetrahedral species and an enhancement of the crystallization kinetics occurred in the irradiated amorphous samples. The rearrangement of the amorphous network is suggested to be related to thermal spikes effects rather than to the defects produced by the ions in the collision cascade.