Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn structures

作     者：Z. B. Guo Y. H. Wu J. J. Qiu B. Y. Zong G. C. Han 

作者机构：Data Storage Institute Agency for Science Technology and Research (A*STAR) DSI Building 5 Engineering Drive 1 Singapore 117608 Department of Electrical and Computer Engineering National University of Singapore Singapore 119260 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2008年第78卷第18期

页      面：184413-184413页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

摘      要：For the double exchange-biased IrMn/NiFe/FeMn structures, the pinning directions at IrMn/NiFe and NiFe/FeMn interfaces were set either parallel or antiparallel to each other by field annealing. Exchange bias and magnetotransport properties in IrMn/NiFe/FeMn trilayers were studied and compared with those of IrMn/NiFe and NiFe/FeMn bilayers. The dependence of exchange bias on the thickness of NiFe layer was different for parallel and antiparallel pinnings. A remarkable increase in resistance was observed which should be attributed to domain-wall resistance induced by the twisted spin structure. The spin configuration of twisted spin structure was simulated by one-dimensional atomic model.