Hole density of states and group velocity in SiO2

作     者：Elena Gnani Susanna Reggiani Massimo Rudan 

作者机构：E. De Castro Advanced Research Center on Electronic Systems and Department of Electronics Computer Science and Systems of the University of Bologna Viale Risorgimento 2 I-40136 Bologna Italy 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2003年第68卷第23期

页      面：233203-233203页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：Density of states and group velocity for the valence bands of SiO2 are worked out as a function of energy. The purpose is to provide reliable parameters for the calculation of hole transport within gate oxides, which is acquiring more relevance in view of the application to advanced MOS devices. It is shown that the applicability of the effective-mass concept to hole transport in SiO2 is much more restricted than in other materials.