Gate-induced g-factor control and dimensional transition for donors in multivalley semiconductors

作     者：Rajib Rahman Seung H. Park Timothy B. Boykin Gerhard Klimeck Sven Rogge Lloyd C. L. Hollenberg 

作者机构：Network for Computational Nanotechnology Purdue University West Lafayette Indiana 47907 USA Department of Electrical Engineering University of Alabama Huntsville Alabama 35899 USA Jet Propulsion Laboratory California Institute of Technology Pasadena California 91109 USA Kavli Institute of Nanoscience Delft University of Technology Lorentzweg 1 2628 CJ Delft The Netherlands Center for Quantum Computer Technology School of Physics University of Melbourne Victoria 3010 Australia 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2009年第80卷第15期

页      面：155301-155301页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Australian Research Council NSA ARO [W911NF-08-1-052] NASA 

摘      要：The dependence of the g factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin-based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and is strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework, the spin-orbit Stark parameters are computed for donors in multivalley semiconductors, silicon, and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate-induced transition from three-dimensional to two-dimensional wave-function confinement show that the corresponding g-factor shift in Si is experimentally observable, and at modest B field, O(1 T) can exceed the Stark shift of the hyperfine interaction.