Endotaxial Silicide Nanowires

作     者：Zhian He David J. Smith P. A. Bennett 

作者机构：Science and Engineering of Materials Program Arizona State University Tempe Arizona 85287-1504 USA Center for Solid State Science Arizona State University Tempe Arizona 85287-1504 USA Department of Physics and Astronomy Arizona State University Tempe Arizona 85287-1504 USA 

出 版 物：《Physical Review Letters》 (Phys Rev Lett)

年 卷 期：2004年第93卷第25期

页      面：256102-256102页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：National Science Foundation  NSF 

主　　题：Nanostructured materials 

摘      要：We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{1¯11} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width of the islands increase with time in a fixed proportion that varies strongly with growth temperature, which shows that the nanowire shape is kinetically determined. It is expected that nanowires could form in many other overlayer/substrate systems via this mechanism.