Growth of thallium overlayers on a Si(100) surface

作     者：A. A. Saranin A. V. Zotov V. G. Kotlyar I. A. Kuyanov T. V. Kasyanova A. Nishida M. Kishida Y. Murata H. Okado M. Katayama K. Oura 

作者机构：Department of Electronic Engineering Faculty of Engineering Osaka University Suita Osaka 565 Japan Institute of Automation and Control Processes 690041 Vladivostok Russia Faculty of Physics and Engineering Far Eastern State University 690000 Vladivostok Russia Department of Electronics Vladivostok State University of Economics and Service 690600 Vladivostok Russia Research Center for Ultra-High Voltage Electron Microscopy Osaka University Ibaraki Osaka 567-0047 Japan 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2005年第71卷第3期

页      面：035312-035312页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：Formation of the thallium (Tl) overlayers on the Si(100)2×1 surface has been studied using scanning tunneling microscopy (STM) and first-principles total-energy calculations. It has been found that adsorption of Tl atom involves a charge transfer leading to the development of a static dipole which is responsible for the field-assisted migration of the Tl adsorbate on the surface. When the STM tip bias voltage is positive, Tl atoms are repelled out from the region underneath the tip apex. In the case of the negative bias voltage, Tl is accumulated underneath the tip. Four principal ordered Tl∕Si(100) reconstructions have been found, namely, three 2×2−Tl reconstructions with 0.25, 0.50, and 0.75 ML of Tl and 2×1−Tl reconstruction with 1.0 ML of Tl. The possible atomic arrangement of these reconstructions has been evaluated using first-principles total-energy calculations.