Enhanced terahertz emission from impurity compensated GaSb

作     者：Ricardo Ascázubi Carl Shneider Ingrid Wilke Robinson Pino Partha S. Dutta 

作者机构：Department of Physics Applied Physics and Astronomy Rensselaer Polytechnic Institute 110 8th Street Troy New York 12180 USA Department of Electrical Computer and Systems Engineering Rensselaer Polytechnic Institute 110 8th Street Troy New York 12180 USA 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2005年第72卷第4期

页      面：045328-045328页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：We report femtosecond optically excited terahertz (THz) emission from tellurium doped GaSb at room temperature. The influence of the majority and minority carrier type and concentrations on the strength of the THz emission is investigated. Strong enhancement of THz emission in GaSb is observed as a result of compensation of native acceptors by tellurium donors. Surface field acceleration and the photo-Dember effect are identified as THz emission mechanisms in GaSb and modeled in dependence of the majority and minority carrier type and concentrations in our GaSb samples. THz emission from p-type GaSb is dominated by the photo-Dember effect whereas THz emission from n-type GaSb is dominated by surface field acceleration. The doping conditions under which THz emission is maximized are identified.