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作者机构:National Engineering Research Center of Electromagnetic Radiation Control Materials University of Electronic Science and Technology of China Chengdu 610054 China Information Materials and Device Applications Key Laboratory of Sichuan Provincial Universities Chengdu University of Information Technology Chengdu 610225 China State Key Laboratory of Electronic Thin-Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 China
出 版 物:《Physical Review Applied》 (Phys. Rev. Appl.)
年 卷 期:2018年第10卷第2期
页 面:024051-024051页
核心收录:
基 金:National Natural Science Foundation of China, NSFC, (51522204, 61475031) National Natural Science Foundation of China, NSFC Ministry of Education of the People's Republic of China, MOE, (20130185120009) Ministry of Education of the People's Republic of China, MOE Ministry of Science and Technology of the People's Republic of China, MOST, (2016YFA0300802) Ministry of Science and Technology of the People's Republic of China, MOST Shanxi Province Science Foundation for Youths, (2015JQO014) Shanxi Province Science Foundation for Youths Fundamental Research Funds for the Central Universities, (ZYGX2014Z001) Fundamental Research Funds for the Central Universities
主 题:Anomalous Hall effect Dopants Magnetic interactions Magnetotransport Spin Hall effect Spintronics Magnetic multilayers Transition metal oxides
摘 要:In this paper, we report an experimental and first-principles calculation study on the anomalous Hall effect (AHE) in Pt/Y3Fe5−xAlxO12 bilayer structures. Using a combinatorial pulsed-laser deposition method, we doped Al3+ ions in the Y3Fe5O12 lattice with different concentrations, which preferentially substitute the tetrahedral Fe3+, leading to significant variation of AHE. A monotonic decrease of anomalous Hall resistance RAHE with increasing Al3+ doping concentration is observed at a temperature of 5 K, which scales linearly with the magnetic proximity effect- (MPE-)induced magnetic moments in Pt, as calculated using first-principles calculations. Temperature-dependent RAHE characterizations indicate a sign change in RAHE at around 100 K, which can be explained by a predominant contribution from spin Hall effect-(SHE-)induced AHE at higher temperatures. Our study demonstrates that the band hybridization and exchange coupling between tetrahedral Fe3+ ions and Pt are the major contributors to the magnetic proximity effect in Pt/YIG heterojunctions.