Anisotropic superconductivity and frozen electronic states at the (111) LaAlO3/SrTiO3 interface

作     者：S. Davis Z. Huang K. Han Ariando T. Venkatesan V. Chandrasekhar 

作者机构：Graduate Program in Applied Physics and Department of Physics and Astronomy Northwestern University 2145 Sheridan Road Evanston Illinois 60208 USA NUSNNI-Nanocore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117551 Singapore NUS Graduate School for Integrative Sciences & Engineering National University of Singapore 117456 Singapore Department of Physics National University of Singapore 117542 Singapore Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore Department of Material Science and Engineering National University of Singapore 117575 Singapore 

出 版 物：《Physical Review B》 (Phys. Rev. B)

年 卷 期：2018年第98卷第2期

页      面：024504-024504页

核心收录：

基　　金：U.S. Department of Energy, USDOE, (DE-FG02-06ER46346) U.S. Department of Energy, USDOE National University of Singapore, NUS National Research Foundation Singapore, NRF, (NRF-CRP10-2012-02, NRF-CRP15-2015-01, NRF-CRP8-2011-06) National Research Foundation Singapore, NRF Ministry of Education - Singapore, MOE, (R-144-000-346-112, R-144-000-364-112) Ministry of Education - Singapore, MOE Ministry of Education, Ethiopia, MOE 

主　　题：Electrical conductivity Impurities in superconductors Superconducting phase transition Superconductivity Interfaces Solid-solid interfaces Superconductors Two-dimensional electron gas Type-II superconductors Hall bar Resistivity measurements 

摘      要：We report measurements of the superconducting properties of the two-dimensional (2D) gas that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) in the (111) crystal orientation, a system that permits in situ tuning of carrier density and disorder by means of a back-gate voltage Vg. Like the (001) oriented LAO/STO interface, superconductivity at the (111) LAO/STO interface can be tuned by Vg. The 2D superconductivity in these (111) LAO/STO samples shows an in-plane anisotropy, being different along different interface crystal directions, and “remembers the disorder landscape at which they are cooled through the superconducting transition. The low energy scale and other characteristics of this memory effect distinguish it from charge-trapping effects previously observed in (001) interface samples.