Effect of band anticrossing on the optical transitions in GaAs1−xNx/GaAs multiple quantum wells

作     者：J. Wu W. Shan W. Walukiewicz K. M. Yu J. W. Ager, III E. E. Haller H. P. Xin C. W. Tu 

作者机构：Applied Science and Technology Graduate Group University of California Berkeley California 94720 Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley California 94720 Department of Materials Sciences and Engineering University of California Berkeley California 94720 Department of Electrical and Computer Engineering University of California San Diego La Jolla California 92093 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2001年第64卷第8期

页      面：085320-085320页

核心收录：

摘      要：Interband transitions in GaAs1−xNx/GaAs multiple quantum wells were studied at room temperature by photomodulated reflectance spectroscopy as a function of well width (3–9 nm), the nitrogen concentration (0.012x0.028), and hydrostatic pressure (0–64 kbar). All experimental data can be quantitatively explained using the dispersion relationship obtained from a band anticrossing model to calculate electron confinement effects in a finite depth quantum well. The results are consistent with a nitrogen-induced large increase of the electron effective mass in the GaAsN quantum wells.