Anisotropy of the Magnetoresistance in Gd5Si2Ge2

作     者：H. Tang V. K. Pecharsky G. D. Samolyuk M. Zou K. A. Gschneidner, Jr. V. P. Antropov D. L. Schlagel T. A. Lograsso 

作者机构：Materials and Engineering Physics Program Ames Laboratory Iowa State University Ames Iowa 50011-3020 USA Department of Materials Science and Engineering Iowa State University Ames Iowa 50011-2300 USA Condensed Matter Physics Program Ames Laboratory Iowa State University Ames Iowa 50011-3020 USA 

出 版 物：《Physical Review Letters》 (Phys Rev Lett)

年 卷 期：2004年第93卷第23期

页      面：237203-237203页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：U.S. Department of Energy, USDOE, (W-7405-ENG-82) U.S. Department of Energy, USDOE Basic Energy Sciences, BES 

主　　题：Gadolinium compounds 

摘      要：The observed magnetoresistance of single crystalline Gd5Si2Ge2 is negative and strongly anisotropic. The absolute values measured along the [100] and [010] directions exceed those parallel to the [001] direction by more than 60%. First principles calculations demonstrate that a structural modification is responsible for the anisotropy of the magnetoresistance, and that the latter is due to a significant reduction of electronic velocity in the [100] direction and the anisotropy of electrical conductivity.