Effects of the narrow band gap on the properties of InN

作     者：J. Wu W. Walukiewicz W. Shan K. M. Yu J. W. Ager, III E. E. Haller Hai Lu William J. Schaff 

作者机构：Applied Science and Technology Graduate Group University of California Berkeley California 94720 Materials Sciences Division Lawrence Berkeley National Laboratory Berkeley California 94720 Department of Materials Science and Engineering University of California Berkeley California 94720 Department of Electrical and Computer Engineering Cornell University Ithaca New York 14853 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2002年第66卷第20期

页      面：201403(R)-201403(R)页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：Infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma edge frequencies were used to determine electron effective masses. The results show a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN. We have also found a large Burstein-Moss shift of the fundamental band gap. The observed effects are quantitatively described by the k⋅p interaction within the two-band Kane model of narrow-gap semiconductors.