Optimization of the extraordinary magnetoresistance in semiconductor-metal hybrid structures for magnetic-field sensor applications

作     者：Holz, A Kronenwerth, O Grundler, D 

作者机构：Univ Bundeswehr Hamburg Fachbereich Eletrotech D-22043 Hamburg Germany Univ Hamburg Inst Angew Phys D-20355 Hamburg Germany Univ Hamburg Zentrum Mikrostrukturfosch D-20355 Hamburg Germany 

出 版 物：《PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES》 (物理学E辑：低维系统和毫微结构)

年 卷 期：2004年第21卷第2-4期

页      面：897-900页

核心收录：

学科分类：07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：EMR magnetoresistance contact resistance magnetic sensors 

摘      要：Semiconductor-metal hybrid structures can exhibit a very large geometrical magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. In this paper, we analyze this effect by means of a model based on the finite element method and compare our results with the experimental data. In particular, we investigate the important effect of the contact resistance rho(c) between the semiconductor and the metal on the EMR effect. Introducing a realistic rho(c) = 3.5 x 10(-7) Omega cm(2) in our model we find that at room temperature this reduces the EMR by 30% if compared to an analysis where PC is not considered. (C) 2003 Elsevier B.V. All rights reserved.