Intralayer backscattering in narrow GaAs/AlxGa1−xAs/GaAs bilayer channels

作     者：G. Yusa K. Muraki T. Saku Y. Hirayama 

作者机构：NTT Basic Research Laboratories NTT Corporation 3-1 Morinosato-Wakamiya Atsugi 243-0198 Japan NTT Advanced Technology Core Research for Evolutional Science and Technology (CREST) Japan Science and Technology Corporation (JST) Japan 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2004年第69卷第8期

页      面：085323-085323页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

摘      要：We study the magnetoresistance Rxx, and the Hall resistance Rxy in GaAs/AlxGa1−xAs/GaAs bilayer systems, in which the electron channel of each layer is latterally confined in a narrow Hall bar of width W=0.3–5μm. We observe that intralayer backscattering destroy some states peculiar to the bilayer system. Rxy plateaus at odd filling factors largely deviate from their integer values in monolayer quantum Hall (QH) states due to backscattering, while the normal Rxy plateau is observed from coupled QH states. Examining the backscattering both in the Hall bars and in their voltage probes, we discuss the suppression of the intralayer backscattering between edge channels strongly modified by the interlayer charge transfer between the front and the back channels.