Resonance Raman spectroscopy in Si and C ion-implanted double-wall carbon nanotubes

作     者：G. D. Saraiva A. G. Souza Filho G. Braunstein E. B. Barros J. Mendes Filho E. C. Moreira S. B. Fagan D. L. Baptista Y. A. Kim H. Muramatsu M. Endo M. S. Dresselhaus 

作者机构：Universidade Estadual do Ceará 60740-000 Fortaleza CE Brazil Departamento de Física Universidade Federal do Ceará Caixa Postal 6030 CEP 60455-900 Fortaleza CE Brazil Micron Technology Inc. 9600 Godwin Drive Manassas Virginia 20110 USA Universidade Federal do Pampa (UNIPAMPA) Campus Bagé 96412-420 Bagé RS Brazil Centro Universitário Franciscano–UNIFRA 97010-032 Santa Maria RS Brazil Departamento de Física Universidade Federal do Rio Grande do Sul 91501-970 Porto Alegre RS Brazil Faculty of Engineering Shinshu University 4-17-1 Wakasato Nagano-shi 380-8553 Japan Department of Physics and Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology Cambridge Massachusetts 02139-4307 USA 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2009年第80卷第15期

页      面：155452-155452页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：CNPq [306335/2007-7, 503956/2007-4, 577489/2008-9, 480364/2008-7] FUNCAP CAPES FAPERGS NSF [07-01497] NSF-CNPq [491083/2005-0] MEXT 

摘      要：The effect of 170 keV Si and 100 keV C ion bombardment on the structure and properties of highly pure, double-wall carbon nanotubes has been investigated using resonance Raman spectroscopy. The implantations were performed at room temperature with ion doses ranging between 1×1013 ions/cm2 and 1×1015 ions/cm2. As expected, the Si irradiation created more disorder than the C irradiation for the same ion fluence. For both species, as the ion-implantation fluence increased, the D-band intensity increased, while the G-band intensity decreased, indicating increased lattice disorder, in analogous form to other forms of graphite and other nanotube types. The frequency of the G band decreased with increasing dose, reflecting a softening of the phonon mode due to lattice defects. With increasing ion fluence, the radial breathing modes (RBMs) of the outer tubes (either semiconducting or metallic) disappeared before the respective RBM bands from the inner tubes, suggesting that the outer nanotubes are more affected than the inner nanotubes by the ion irradiation. After Si ion bombardment to a dose of 1×1015 ions/cm2, the Raman spectrum resembled that of highly disordered graphite, indicating that the lattice structures of the inner and outer nanotubes were almost completely destroyed. However, laser annealing partially restored the crystalline structure of the nanotubes, as evidenced by the re-emergence of the G and RBM bands and the significant attenuation of the D band in the Raman spectrum.