Band anticrossing in GaP1−xNx alloys

作     者：J. Wu W. Walukiewicz K. M. Yu J. W. Ager, III E. E. Haller Y. G. Hong H. P. Xin C. W. Tu 

作者机构：Materials Sciences Division Lawrence Berkeley National Lab Berkeley California 94720 Applied Science and Technology Graduate Group University of California Berkeley California 94720 Department of Materials Science and Engineering University of California Berkeley California 94720 Department of Electrical and Computer Engineering University of California San Diego La Jolla California 92093 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2002年第65卷第24期

页      面：241303(R)-241303(R)页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：The optical properties of GaP1−xNx alloys (0.7%~x~2.3%) grown by gas-source molecular-beam epitaxy have been studied using photoluminescence spectroscopy under hydrostatic pressures up to 133 kbar at 30 K. The peak energy of the band-edge photoluminescence spectrum shows an unusual, nonmonotonic dependence on the hydrostatic pressure. The anomalous results are explained in terms of an anticrossing interaction of localized nitrogen states with the Γ band edge at low pressures and with the X band edge at large hydrostatic pressures.