Inhibition of negative differential resistance in modulation-doped n-type GaxIn1−xNyAs1−y∕GaAs quantum wells

作     者：Y. Sun M. P. Vaughan A. Agarwal M. Yilmaz B. Ulug A. Ulug N. Balkan M. Sopanen O. Reentilä M. Mattila C. Fontaine A. Arnoult 

作者机构：Department of Electronic System Engineering University of Essex Wivenhoe Park Colchester CO4 3SQ United Kingdom Faculty of Arts & Science Department of Physics Akdeniz University Antalya Turkey Micro and Nanosciences Laboratory Helsinki University of Technology P.O. Box 3500 Helsinki 02015 Finland Laboratory for Analysis and Architecture of System 7 Avenue du Colonel Roche 31077 Toulouse Cedex 4 France 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2007年第75卷第20期

页      面：205316-205316页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：We present the results of hot-electron momentum relaxation studies for longitudinal transport in modulation doped GaxIn1−xNyAs1−y∕GaAs quantum wells. Experimental results show that the high field drift velocity saturates at a value close to 1×107cm∕s with no evidence for negative differential resistance or instabilities. Experimental results are compared with a simple theoretical model for transport taking into account the effect of nonequilibrium phonon production. Model calculations indicate that enhanced momentum scattering for electrons with nondrifting hot phonons may be the cause for the reduction in drift velocity.