Pressure-induced change in the electronic structure of epitaxially strained La1−xSrxMnO3 thin films

作     者：K. Horiba A. Maniwa A. Chikamatsu K. Yoshimatsu H. Kumigashira H. Wadati A. Fujimori S. Ueda H. Yoshikawa E. Ikenaga J. J. Kim K. Kobayashi M. Oshima 

作者机构：Department of Applied Chemistry The University of Tokyo Tokyo 113-8656 Japan Synchrotron Radiation Research Organization The University of Tokyo Tokyo 113-8656 Japan Core Research for Evolutional Science and Technology (CREST) Japan Science and Technology Agency Tokyo 102-0075 Japan Department of Physics The University of Tokyo Tokyo 113-0033 Japan NIMS/SPring-8 Hyogo 679-5148 Japan JASRI/SPring-8 Hyogo 679-5198 Japan 

出 版 物：《Physical Review B》 (物理学评论B辑：凝聚态物质与材料物理学)

年 卷 期：2009年第80卷第13期

页      面：132406-132406页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：JSPS [A19684010  B19740199] 

摘      要：We report the observation of pressure-induced changes in the electronic structures of La1−xSrxMnO3 (LSMO) by hard x-ray photoemission spectroscopy. Application of compressive and tensile strains results in the formation of a gap at the Fermi level (EF) and suppression of spectral weight at EF, respectively, across magnetic phase transitions. In contrast, no detectable change is observed in the absence of phase transitions even upon application of pressure. These results indicate that the change in the electronic structure of LSMO does not originate from the lattice distortions alone, but is induced by subtle interplay among the lattice, magnetic, and orbital degrees of freedom.