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作者机构:Institute for Molecular Science Myodaiji Okazaki 444-8585 Japan Department of Kansei Engineering Shinshu University Ueda 386-8567 Japan National Institute of Materials and Chemical Research Tsukuba 305-8565 Japan
出 版 物:《Physical Review Letters》 (Phys Rev Lett)
年 卷 期:2001年第87卷第1期
页 面:015701-015701页
核心收录:
摘 要:To clarify the thresholdless, hysteresis free V-shaped switching due to frustration between ferro- and antiferroelectricity, we have studied a prototype binary mixture system. The apparent orientational order parameters, 〈P2〉 and 〈P4〉, obtained from polarized Raman scattering in thin homogeneous cells indicate that substrate interfaces induce some randomization of local in-plane directors at the tip of the V. Their correlation lengths, ξ∥≈3.5nm and ξ⊥≈75nm, have been estimated by assuming the Langevin-like reorientation. Because of the much shorter ξ∥ and ξ⊥ than the visible light wavelength, the switching process looks uniform.