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Effect of Surface Termination on the Electronic Properties of LaNiO3 Films

作     者:Divine P. Kumah Andrei Malashevich Ankit S. Disa Dario A. Arena Frederick J. Walker Sohrab Ismail-Beigi Charles H. Ahn 

作者机构:Center for Research on Interface Structures and Phenomena and Department of Applied Physics Yale University New Haven Connecticut 06520 USA National Synchrotron Light Source Brookhaven National Laboratory Upton New York 11973 USA Department of Mechanical Engineering and Materials Science Yale University New Haven Connecticut 06520 USA 

出 版 物:《Physical Review Applied》 (Phys. Rev. Appl.)

年 卷 期:2014年第2卷第5期

页      面:054004-054004页

核心收录:

学科分类:07[理学] 0702[理学-物理学] 

基  金:U.S. Department of Energy  (DE-AC02-06CH11357) 

主  题:Lanthanum compounds 

摘      要:The electronic and structural properties of thin LaNiO3 films grown by using molecular beam epitaxy are studied as a function of the net ionic charge of the surface terminating layer. We demonstrate that electronic transport in nickelate heterostructures can be manipulated through changes in the surface termination due to a strong coupling of the surface electrostatic properties to the structural properties of the Ni—O bonds that govern electronic conduction. We observe experimentally and from first-principles theory an asymmetric response of the structural properties of the films to the sign of the surface charge, which results from a strong interplay between electrostatic and mechanical boundary conditions governing the system. The structural response results in ionic buckling in the near-surface NiO2 planes for films terminated with negatively charged NiO2 and bulklike NiO2 planes for films terminated with positively charged LaO planes. The ability to modify transport properties by the deposition of a single atomic layer can be used as a guiding principle for nanoscale device fabrication.

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