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Semipolar III-nitride laser diodes with zinc oxide cladding

有锌氧化物 cladding 的 Semipolar III 氮化物激光二极管

作     者:Myzaferi, Anisa Reading, Arthur H. Farrell, Robert M. Cohen, Daniel A. Nakamura, Shuji Denbaars, Steven P. 

作者机构:Univ Calif Santa Barbara Dept Elect & Comp Engn Santa Barbara CA 93106 USA Univ Calif Santa Barbara Dept Mat Santa Barbara CA 93106 USA Univ Wisconsin Dept Elect & Comp Engn Madison WI 53706 USA 

出 版 物:《OPTICS EXPRESS》 (光学快报)

年 卷 期:2017年第25卷第15期

页      面:16922-16930页

核心收录:

学科分类:070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基  金:Solid State Lighting and Energy Electronics Center (SSLEEC) at the University of California Santa Barbara (UCSB) National Science Foundation (NSF) National Nanotechnology Infrastructure Network (NNIN) [ECS-0335765] NSF Materials Research Science and Engineering Centers (MRSEC) Program [DMR-1121053] King Abdulaziz City for Science and Technology (KACST) King Abdullah University of Science and Technology (KAUST) UCSB 

主  题:Absorption coefficient Chemical vapor deposition Diode lasers Indium tin oxide Refractive index Scanning electron microscopy 

摘      要:Incorporating transparent conducting oxide (TCO) top cladding layers into IIInitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (20 (2) over bar1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm(2) and a threshold voltage of 10.3 V in a semipolar (20 (2) over bar1) III-nitride LD with ZnO top cladding. (C) 2017 Optical Society of America

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