Interaction between confined phonons and photons in periodic silicon resonators

作     者：A. Iskandar A. Gwiazda J. Younes M. Kazan A. Bruyant M. Tabbal G. Lerondel 

作者机构：Department of Physics American University of Beirut P.O. Box 11-0236 Riad El-Solh Beirut 1107-2020 Lebanon Laboratoire de Nanotechnologie et d’Instrumentation Optique ICD CNRS UMR 6281 Université de Technologie de Troyes 10010 Troyes France 

出 版 物：《Physical Review B》 (Phys. Rev. B)

年 卷 期：2018年第97卷第9期

页      面：094308-094308页

核心收录：

基　　金：CNRS-Lebanon SYNAPSE, (D201207251) TEZO, (E201211419, E201211445) American University of Beirut, AUB China Scholarship Council, CSC European Social Fund, ESF Conseil National de la Recherche Scientifique, CNRS 

主　　题：Confinement Phonons Photonics Nanostructures Finite-difference time-domain method Raman spectroscopy 

摘      要：In this paper, we demonstrate that phonons and photons of different momenta can be confined and interact with each other within the same nanostructure. The interaction between confined phonons and confined photons in silicon resonator arrays is observed by means of Raman scattering. The Raman spectra from large arrays of dielectric silicon resonators exhibited Raman enhancement accompanied with a downshift and broadening. The analysis of the Raman intensity and line shape using finite-difference time-domain simulations and a spatial correlation model demonstrated an interaction between photons confined in the resonators and phonons confined in highly defective regions prompted by the structuring process. It was shown that the Raman enhancement is due to collective lattice resonance inducing field confinement in the resonators, while the spectra downshift and broadening are signatures of the relaxation of the phonon wave vector due to phonon confinement in defective regions located in the surface layer of the Si resonators. We found that as the resonators increase in height and their shape becomes cylindrical, the amplitude of their coherent oscillation increases and hence their ability to confine the incoming electric field increases.