Crater formation via homoepitaxy of adatoms dislodged from reducing oxide islands on metal surfaces

作     者：Guangwen Zhou Weiying Dai Judith C. Yang 

作者机构：Department of Mechanical Engineering & Multidisciplinary Program in Materials Science and Engineering State University of New York Binghamton New York 13902 USA MR Physics Center Department of Radiology Harvard University Massachusetts 02215 USA Department of Mechanical Engineering and Materials Science University of Pittsburgh Pennsylvania 15261 USA 

出 版 物：《Physical Review B》 (Phys. Rev. B Condens. Matter Mater. Phys.)

年 卷 期：2008年第77卷第24期

页      面：245427-245427页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 07[理学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

摘      要：The reduction of Cu2O islands on Cu(100) surfaces under vacuum annealing leads to the formation of surface craters on the substrate surface surrounding the reducing oxide islands. These craters exhibit growth instability characterized by increased slope of both the inner and outer facets of the crater rims. We suggest that the crater formation and the growth instability are related to the homoepitaxial growth of Cu adatoms dislodged from the reducing Cu2O islands. Incorporation of such atomic processes in kinetic Monte Carlo simulations reproduces the morphological features of the experimentally observed craters.