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作者机构:Institute of Automation and Control Processes 690041 Vladivostok Russia Department of Electronics Vladivostok State University of Economics and Service 690600 Vladivostok Russia Faculty of Physics and Engineering Far Eastern State University 690000 Vladivostok Russia
出 版 物:《Physical Review B》 (物理学评论B辑:凝聚态物质与材料物理学)
年 卷 期:2002年第66卷第16期
页 面:165401-165401页
核心收录:
摘 要:Deposition of Al onto the Si(111)7×7 surface held at temperatures ranging from 475 to 600 °C has been found to result in the formation of a superlattice of the identical-size nanoclusters (magic clusters). The Al magic clusters appear to have the structure similar to that reported recently for the magic clusters of Ga and In on Si(111): each cluster contains six metal atoms linked by three Si atoms. The present results reveal that at the early stages of deposition all the group III metals demonstrate a distinct tendency for the formation of the magic clusters on Si surfaces.