Removal of accidental degeneracy in semiconductor quantum dots

作     者：Sathwik Bharadwaj Siddhant Pandey L. R. Ram-Mohan 

作者机构：Department of Physics Worcester Polytechnic Institute Worcester Massachusetts 01609 USA Departments of Physics Electrical and Computer Engineering and Mechanical Engineering Worcester Polytechnic Institute Worcester Massachusetts 01609 USA 

出 版 物：《Physical Review B》 (Phys. Rev. B)

年 卷 期：2017年第96卷第19期

页      面：195305-195305页

核心收录：

基　　金：Worcester Polytechnic Institute  WPI 

主　　题：III-V semiconductors Quantum dots Quantum wells Finite-element method Group theory 

摘      要：We present a quantitative analysis of the energy levels and wave functions of carriers in a cubic quantum dot of GaAs embedded in Ga(1−x)AlxAs with finite confining potential barriers at their interfaces. The energy spectrum has substantially reduced degeneracies compared to the analytically determined energy levels of the infinite-barrier quantum box of the same dimensions. The level degeneracy of states has been explained by group representations of the point group Oh. Projection operators for the irreducible representations provide a way to obtain the linear combinations of the degenerate wave functions which form a basis set for the representations. Energy-level splittings in the presence of externally applied electric and magnetic fields are also studied.