Doping of Magic Nanoclusters in the Submonolayer In/Si(100) System

作     者：V. G. Kotlyar A. V. Zotov A. A. Saranin E. N. Chukurov T. V. Kasyanova M. A. Cherevik I. V. Pisarenko H. Okado M. Katayama K. Oura V. G. Lifshits 

作者机构：Institute of Automation and Control Processes 690041 Vladivostok Russia Department of Electronics Vladivostok State University of Economics and Service 690600 Vladivostok Russia Department of Electronic Engineering Graduate School of Engineering Osaka University Suita Osaka 565-0871 Japan Faculty of Physics and Engineering Far Eastern State University 690000 Vladivostok Russia Research Center for Ultra-High Voltage Electron Microscopy Osaka University Ibaraki Osaka 567-0047 Japan 

出 版 物：《Physical Review Letters》 (Phys Rev Lett)

年 卷 期：2003年第91卷第2期

页      面：026104-026104页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Russian National Program, (40.012.1.1.1151, 40.072.1.1.1178) Universities of Russia, (UR.01.01.035) Russian Foundation for Fundamental Investigations, RFFI, (02-02-16105) Ministry of Education, Culture, Sports, Science and Technology, MEXT 

主　　题：Nanostructured materials 

摘      要：Si(100)4×3−In reconstruction is essentially a superlattice of magic (identical-size) Si7In6 nanoclusters. Using scanning tunneling microscopy (STM) observations, we have found that under appropriate growth conditions up to 35% of these clusters can be modified; namely, two Si atoms in the cluster can be replaced by two In atoms, thus forming a Si5In8 cluster. This modification can be considered as a doping of the magic cluster, as it changes the electronic properties of the cluster from semiconducting towards metallic. The doped cluster is less rigid than the ordinary one and swings in the electrical field of the STM tip. The atomic structure and stability of the doped magic cluster have been examined using first-principles total-energy calculations.