Photoelastic coupling in gallium arsenide optomechanical disk resonators

作     者：Baker, Christopher Hease, William Dac-Trung Nguyen Andronico, Alessio Ducci, Sara Leo, Giuseppe Favero, Ivan 

作者机构：Univ Paris Diderot Sorbonne Paris Cite Lab Mat & Phenomenes Quant CNRS UMR 7162 F-75013 Paris France 

出 版 物：《OPTICS EXPRESS》 (Opt. Express)

年 卷 期：2014年第22卷第12期

页      面：14072-14086页

核心收录：

学科分类：070207[理学-光学] 07[理学] 08[工学] 0803[工学-光学工程] 0702[理学-物理学] 

基　　金：French ANR through the NOMADE project ERC through the GANOMS project 

主　　题：Computation methods Distributed Bragg reflectors Effective refractive index Radiation pressure Refractive index Total internal reflection 

摘      要：We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the disk boundary and from the strain-induced refractive index changes in the material, for various mechanical modes of the disks. Photoelastic optomechanical coupling is shown to be a predominant coupling mechanism for certain disk dimensions and mechanical modes, leading to total coupling g(om) and g(0) reaching respectively 3 THz/nm and 4 MHz. Finally, we point towards ways to maximize the photoelastic coupling in GaAs disk resonators, and we provide some upper bounds for its value in various geometries. (C) 2014 Optical Society of America