Large Voltage-Induced Changes in the Perpendicular Magnetic Anisotropy of an MgO-Based Tunnel Junction with an Ultrathin Fe Layer

作     者：Takayuki Nozaki Anna Kozioł-Rachwał Witold Skowroński Vadym Zayets Yoichi Shiota Shingo Tamaru Hitoshi Kubota Akio Fukushima Shinji Yuasa Yoshishige Suzuki 

作者机构：National Institute of Advanced Industrial Science and Technology Spintronics Research Center Tsukuba Ibaraki 305-8568 Japan AGH University of Science and Technology Faculty of Physics and Applied Computer Science Al. Mickiewicza 30 30-059 Kraków Poland AGH University of Science and Technology Department of Electronics Al. Mickiewicza 30 30-059 Kraków Poland Graduate School of Engineering Science Osaka University 1-3 Machikaneyama Toyonaka Osaka 560-8531 Japan 

出 版 物：《Physical Review Applied》 (Phys. Rev. Appl.)

年 卷 期：2016年第5卷第4期

页      面：044006-044006页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Japan Society for the Promotion of Science, JSPS, (26709046) Council for Science, Technology and Innovation, CSTI 

主　　题：Magnetic anisotropy Magnetoresistance Magnetic tunnel junctions 

摘      要：We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface magnetic anisotropy energy of 2.1 mJ/m2 is achieved in the Cr/ultrathin Fe/MgO structure. A large voltage-induced perpendicular magnetic anisotropy change is observed under the negative-bias voltage applications for the case of the Fe layer thinner than 0.6 nm. The amplitude of the voltage-induced anisotropy energy change exhibits a strong Fe-thickness dependence and it reaches as high as 290 fJ/Vm. The observed high values of the surface anisotropy and voltage-induced anisotropy energy change demonstrate the feasibility of voltage-driven spintronic devices.