Chapter 6 DX and Related Defects in Semiconductors

作     者：Malloy, Kevin J. Khachaturyan, Ken 

作者机构：Center for High Technology Materials Department of Electrical Computer Engineering University of New Mexico Albuquerque NM United States Center for Materials Science Los Alamos National Laboratory Los Alamos NM United States 

出 版 物：《Semiconductors and Semimetals》 (Semicond. Semimet.)

年 卷 期：1993年第38卷第C期

页      面：235-291页

核心收录：

基　　金：The authors thank Prof. Eicke R. Weber for many stimulating discussions. One of the authors (KK) was financially supported by the AT&T foundation. KJM would like to acknowledge the support of the Air Force Office of Scientific Research and to remember the late Gerald L. Pearson for encouraging his initial interest in the subject 

摘      要：This chapter discusses DX and related defects in semiconductors. Often, the most difficult aspect of research into semiconductor defects is arriving at an accurate description of the properties of the defect enabling the study of the defect by any laboratory. While observations of the optical, electrical, and environmental behavior of a defect form a useful starting point, uncertainty over the necessary and sufficient properties for observation and investigation of the defect can linger for a surprisingly long time. Research on the DX center fully reflects these difficulties. Only when the atomic nature and workings of the defect are understood do the interpretations of the defect begin to converge. Such explicit atomic-level understanding has been the goal of recent DX studies, along with attempts at first-principle theories of DX centers. The chapter also discusses the Hall measurements of the electrical properties of semiconductors. A typical Hall measurement consists of a plot of the logarithm of the Hall electron concentration as a function of the inverse temperature 1/ T in kelvins. The slope of such an Arrhenius plot is the standard free enthalpy change of an electron transition from a bound state to the conduction band minimum.