Chapter 3 Ultrafast dynamics in wide bandgap wurtzite GaN

作     者：Tsen, K.T. 

作者机构：Department of Physics Astronomy Arizona State University Tempe AZ United States 

出 版 物：《Semiconductors and Semimetals》 (Semicond. Semimet.)

年 卷 期：2001年第67卷第C期

页      面：109-149页

核心收录：

主　　题：Zinc sulfide 

摘      要：This chapter discusses electron–phonon and phonon–phonon interactions and nonequilibrium electron distributions in wurtzite gallium nitride (GaN) by using subpicosecond time-resolved Raman spectroscopy. Electronics based upon the existing semiconductor device technologies of silicon and gallium arsenide (GaAs) cannot tolerate elevated temperatures or chemically hostile environments. The wide band-gap semiconductors with their thermal conductivities, large breakdown fields, and resistance to chemical corrosion can be the materials of choice for these applications. Among the wide band-gap semiconductors, the III–V nitrides are very promising semiconductor systems for device applications in the blue and ultraviolet wavelengths. Knowledge of both carrier and phonon dynamical properties is indispensable for device engineers to design better and faster devices. To enhance the speed of devices based on these nitride materials, novel transient transport properties must be used such as electron velocity overshoot and ballistic electron transport in the case of GaAs and indium phosphide (InP).