Epitaxial Growth and Magnetic Properties of NiMnAs Films on GaAs Substrates

作     者：Jia-Lin Ma Hai-Long Wang Xing-Min Zhang Shuai Yan Wen-Sheng Yan Jian-Hua Zhao 马佳淋;王海龙;张兴民;闫帅;闫文盛;赵建华

作者机构：State Key Laboratory of Superlattices and Microstructures Institute of SemiconductorsChinese Academy of Sciences College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Shanghai Synchrotron Radiation Facility Institute of Applied Physics Chinese Academy of Sciences National Synchrotron Radiation Laboratory University of Science and Technology of China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences 

出 版 物：《Chinese Physics Letters》 (中国物理快报（英文版）)

年 卷 期：2019年第36卷第1期

页      面：65-69页

核心收录：

学科分类：07[理学] 0702[理学-物理学] 

基　　金：Supported by the National Key Research and Development Program of China under Grant No 2017YFB0405701 the National Natural Science Foundation of China under Grant Nos U1632264 and 11706374 the Key Research Project of Frontier Science of Chinese Academy of Science under Grant No QYZDY-SSW-JSC015 

主　　题：Epitaxial Growth Magnetic Properties GaAs Substrates 

摘      要：Single-phase Ni_(0.92)Mn_(1.08) As films with strained C_(1b) symmetry are grown on GaAs(001) substrates. In addition,a preferred epitaxial configuration of(110)-orientated Ni_(0.92)Mn_(1.08) As on(001)-orientated GaAs is revealed by synchrotron radiation measurement. The magnetic properties of the films are found to be significantly influenced by the growth temperature and the optimized growth temperature is determined to be ~370℃. According to the results of x-ray absorption spectroscopy, these phenomena can be attributed to the variation of the local electronic structure of the Mn atoms. Our work provides useful information for the further investigations of NiMnAs, which is a theoretically predicted half-metal.