Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

作     者：黄鹏程 陈书明 陈建军 

作者机构：College of Computer National University of Defense Technology Changsha 410073 China National Laboratory for Parallel and Distributed Processing National University of Defense Technology Changsha 410073 China 

出 版 物：《Chinese Physics B》 (中国物理B（英文版）)

年 卷 期：2016年第25卷第3期

页      面：283-289页

核心收录：

学科分类：080903[工学-微电子学与固体电子学] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 080501[工学-材料物理与化学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61376109,61434007,and 61176030) the Advanced Research Project of National University of Defense Technology,China(Grant No.0100066314001) 

主　　题：floating body effect in-line stacking silicon-on-insulator source injection 

摘      要：In this paper, the effect of floating body effect （FBE） on a single event transient generation mechanism in fully depleted （FD） silicon-on-insulator （SOI） technology is investigated using three-dimensional technology computer-aided design （3D- TCAD） numerical simulation. The results indicate that the main SET generation mechanism is not carder drift/diffusion but floating body effect （FBE） whether for positive or negative channel metal oxide semiconductor （PMOS or NMOS）. Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking （IS） layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.