Degradation of magnetic tunneling junctions caused by pinhole formation and growth

作     者：Xi, Haiwen Franzen, Scott Guzman, Javier I. Mao, Sining 

作者机构：Seagate Technol RHO Bloomington MN 55435 USA 

出 版 物：《JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS》 (磁学和磁性材料杂志)

年 卷 期：2007年第319卷第1-2期

页      面：60-63页

核心收录：

学科分类：080805[工学-电工理论与新技术] 080904[工学-电磁场与微波技术] 0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 0702[理学-物理学] 

主　　题：magnetic tunneling junctions magnetoresistance resistance degradation pinholes 

摘      要：A theory is developed to describe the pinhole formation and growth in magnetic tunneling junctions (MTJs) using the Kolmogorov-Avrami (KA) model. The theory relates the pinhole dynamics and the gradual degradation of the imperfect barrier layers and then the magnetic junctions under external stress. Form this study, analytical expressions of junction resistance and magnetoresistive (MR) ratio as functions of time are provided to characterize the junction degradation. (C) 2007 Elsevier B.V. All rights reserved.