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作者机构:Univ Oran Es Senia Fac Sci Dept Phys LSMC Oran 31100 Algeria Univ Lyon 1 Dept Phys Mat F-69622 Villeurbanne France
出 版 物:《JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA》 (电子光谱学及相关现象杂志)
年 卷 期:2003年第133卷第1-3期
页 面:55-63页
核心收录:
学科分类:070207[理学-光学] 07[理学] 08[工学] 0703[理学-化学] 0803[工学-光学工程] 0702[理学-物理学]
主 题:F F+ centres cathodoluminescence (CL) alpha-Al2O3 defects
摘 要:alpha-Al2O3(0 0 0 1) single crystals have been investigated using cathodoluminescence (CL) technique and Auger electron spectroscopy (AES). The main luminescent centres such as F, F+ or Cr3+ activated during the irradiation of crystals by electrons of 4 keV energy were detected and discussed. CL intensity is shown to be highly dependent on both synthesis conditions and thermal annealing treatments. The air-annealing treatments at high temperature (1700degreesC reduce considerably the concentration of defects inducing a constant evolution of CL-signal of the band located at 330 nm attributed to F+ defects. On the contrary, crystals not annealed enough display a large increase of the F+ CL-signal during the electron irradiation. The F+ emission is also observed to be very sensitive to electron dose. (C) 2003 Elsevier B.V. All rights reserved.