Second order Newton iteration method and its application to MOS compact modeling and circuit simulation

作     者：Yu, ZP Dutton, RW 

作者机构：Stanford Univ Ctr Integrated Syst Stanford CA 94305 USA 

出 版 物：《VLSI DESIGN》 (超大规模集成电路设计)

年 卷 期：1998年第6卷第1-4期

页      面：141-145页

核心收录：

学科分类：0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 0812[工学-计算机科学与技术（可授工学、理学学位）] 

主　　题：numerical algorithm Newton method nonlinear equation second order iterative scheme MOS modeling circuit simulation 

摘      要：A robust second order Newton iteration scheme is proposed for solving the nonlinear algebraic equations. Potential applications include the projection of the initial guess to the solution when the parameters in the equations are changed. The mathematical derivation leading to the scheme is given and pros and cons of the method are discussed. As an example, the method has been applied to the evaluation of charge-sheet model for MOS as used in the circuit simulation.