Numerical analysis of electrical characteristics of polysilicon thin film transistors fabricated by excimer laser crystallisation

作     者：Mariucci, L Giacometti, F Pecora, A Massussi, F Fortunato, G Valdinoci, M Colalongo, L 

作者机构：CNR IESS I-00156 Rome Italy Univ Bologna Dipartimento Elettron Informat & Sistemist I-40136 Bologna Italy 

出 版 物：《ELECTRONICS LETTERS》 (Electron. Lett.)

年 卷 期：1998年第34卷第9期

页      面：924-926页

核心收录：

学科分类：0808[工学-电气工程] 0809[工学-电子科学与技术（可授工学、理学学位）] 08[工学] 

主　　题：threshold voltage thin film transistors field effect mobility density of states grain boundary 1.5 V excimer laser crystallisation semiconductor Si 2D numerical analysis electrical characteristics elemental semiconductors laser materials processing silicon polysilicon thin film transistor semiconductor device models Semiconductor device modelling, equivalent circuits, design and testing crystallisation model defect distribution Insulated gate field effect transistors 

摘      要：The authors have performed a 2D numerical analysis of the electrical characteristics of polysilicon thin-film transistors (TFTs). made by excimer laser crystallisation (ELC), with high field-effect mobility ( 300cm(2)/Vs) and low threshold voltage ( 1.5V). In spite of the highly non-uniform defect distribution in ELC-polysilicon (mainly localised at the grain boundaries), the authors show that the device characteristics can be adequately described by using, in the numerical analysis. an effective density of states uniformly distributed within the semiconductor. This model, already verified in solid phase crystallised polysilicon TFTs. allows the analysis of ELC-polysilicon devices to be simplified.