Spectroscopic ellipsometry study on the electronic structure near the absorption edge of GaAsN alloys

作     者：Yaguchi, H Matsumoto, S Hijikata, Y Yoshida, S Maeda, T Ogura, M Aoki, D Onabe, K 

作者机构：Dept Elect & Elect Syst Saitama 3388570 Japan Natl Inst Adv Ind Sci & Technol Tsukuba Ibaraki 3058568 Japan Univ Tokyo Dept Adv Mat Sci Bunkyo Ku Tokyo 1138656 Japan 

出 版 物：《PHYSICA STATUS SOLIDI B-BASIC RESEARCH》 (固体物理学，B辑：基础研究)

年 卷 期：2001年第228卷第1期

页      面：269-272页

核心收录：

学科分类：07[理学] 0809[工学-电子科学与技术（可授工学、理学学位）] 070205[理学-凝聚态物理] 08[工学] 0805[工学-材料科学与工程（可授工学、理学学位）] 080502[工学-材料学] 0702[理学-物理学] 

主　　题：61.10.Nz 71.20.Nr 78.20.Ci 78.66.Fd S7.14 

摘      要：Spectroscopic ellipsometry has been used to investigate the electronic structure near the fundamental absorption edge of GaAsN alloys grown by metalorganic vapor phase epitaxy. The fundamental absorption edge is clearly observed in the imaginary part of the dielectric function and shifts to lower energies with increasing N concentration. In addition, the absorption structure is observed near the E-0 gap energy of GaAs even in GaAsN alloys. This unequivocally shows that the fundamental absorption edge of GaAsN is not shifted from the E-0 gap of GaAs but newly formed by the N incorporation. Thus. the formation of the narrowest band gap of GaAsN alloys is found to be completely different from that of conventional compound semiconductor alloys, such as AlGaAs and GaAsP.